法人別リリース

Fujitsu Semiconductor Memory Solution Announces Change in Its Name to RAMXEED LIMITED

RAMXEED LIMITED — Tue, 20 Aug 2024 15:00:00 +0900

YOKOHAMA, Japan, Aug. 20, 2024 /Kyodo JBN/ --
Fujitsu Semiconductor Memory Solution Limited
Fujitsu Semiconductor Memory Solution Limited is pleased to announce that the company name will change to RAMXEED LIMITED, effective January 1, 2025. In conjunction with the name change, the company’s email addresses and website URL will be updated prior to the action. There will be no changes to its postal address and phone numbers.

New company logo: https://cdn.kyodonewsprwire.jp/prwfile/release/M106685/202408074740/_prw_PI3fl_PY8hv9Fw.png

Even after the name change, the company will continue to provide its customers with high-performance and high-quality FeRAM/ReRAM semiconductor memory products and services. Additionally, it remains committed to creating and delivering new value and optimal services.

Origin of Company Name "RAMXEED"
RAMXEED represents a company that continues to co-create and grow by pursuing infinite possibilities based on "RAM" memory technology. "XEED" incorporates the meanings of "Succeed" and "Exceed," while "X" signifies infinite possibilities and co-creation.

About New Company Logo of RAMXEED LIMITED

Logo: https://cdn.kyodonewsprwire.jp/prwfile/release/M106685/202408074740/_prw_PI2fl_21s5w60o.png

The space within the letter "R" and double "E" emphasizes the infinite possibilities and the black-magenta "X" represents the way the company co-creates. It chose magenta as its symbol color, the purest color that is one of the primary colors, to demonstrate its determination to aim for the "Niche-Top" with the core of its unique technology. Its vividness evokes a "future full of dreams" inspiring excitement and a sense of exhilaration.

About Brand Slogan of RAMXEED LIMITED

Brand Slogan: https://cdn.kyodonewsprwire.jp/prwfile/release/M106685/202408074740/_prw_PI1fl_NAKu0lAE.png

The company has set "Our Memory, Your Future" as its brand slogan, globally and straightforwardly representing its PURPOSE "Realizing a future full of dreams with memory technology." At RAMXEED, it fulfills everyone’s "future full of dreams" with the memory technology it has developed over the years.

Company Name Change Schedule
Current company name: Fujitsu Semiconductor Memory Solution Limited (until December 31, 2024)
E-mail address: xxxx.xxxx@fujitsu.com (available until September 20, 2024)
URL: https://www.fujitsu.com/jp/group/fsm/en/ (scheduled to be closed within 2025)

New company name: RAMXEED LIMITED (from January 1, 2025)
E-mail address: yyyy.yyyy@ramxeed.com (already available)
URL: https://ramxeed.com/ (scheduled to be published in September 2024)

富士通セミコンダクターメモリソリューション社名変更のお知らせ

RAMXEED — Tue, 20 Aug 2024 11:30:00 +0900

2024年8月20日
富士通セミコンダクターメモリソリューション株式会社
プレスリリース

社名変更のお知らせ

富士通セミコンダクターメモリソリューション株式会社は、2025年1月1日付で社名を「RAMXEED株式会社」に変更いたします。
また、社名変更に伴い、メールアドレスとウェブサイトのURLを先行して変更いたします。詳細につきましては、以下の「■社名変更スケジュール」をご覧ください。なお、住所と電話番号の変更はございません。
社名変更後も、高性能・高品質なFeRAM/ReRAMの半導体メモリ製品とサービスをお客様に引き続きお届けするとともに、新しい価値・最適なサービスを創造し提供してまいります。

■「RAMXEED」社名の由来
RAMXEED（ラムシード）は、メモリ「RAM」の技術を基軸（同音の「SEED」=種）に、無限の可能性を追い求め、共創しながら成長し続ける会社を表しています。
｢XEED」は成功のSUCCEED 、今を超えていくEXCEEDという意味を込め、さらに「X」は無限の可能性と共創を示しています。

■RAMXEED株式会社の新ロゴについて

無限の可能性を追い求め、未来に突き進む姿を「R」と2 つの「E」に隙間を作ることで強調し、「X」はブラックとマゼンタで交差し合うことで、共創する姿を表現しています。
RAMXEEDのシンボルカラーは、独自技術をコアに「ニッチトップ」を目指す決意を表すため、色の三原色の一つである混じり気のない「マゼンタ」を採用しています。その鮮やかさは「夢ある未来」を想起させ、胸が躍る、高揚感を示しています。
■RAMXEED株式会社のブランドスローガンについて

RAMXEED株式会社のPURPOSE「夢ある未来を、メモリの技術で叶える。」をグローバルで端的に表現できる言葉「Our Memory, Your Future」をブランドスローガンとして設定しました。
RAMXEED株式会社は、世界中のすべての人の「夢ある未来」を、これまで培ってきたメモリの技術で叶えていきます。

■社名変更スケジュール
現社名：富士通セミコンダクターメモリソリューション株式会社（2024年12月31日まで）
メールアドレス：xxxx.xxxx@fujitsu.com　（2024年9月20日までメール送受信可）
URL：https://www.fujitsu.com/jp/group/fsm/（2025年内に閉鎖予定）

新社名：RAMXEED株式会社（ラムシードカブシキガイシャ）（2025年1月1日から）
（英文社名：RAMXEED LIMITED）
メールアドレス：yyyy.yyyy@ramxeed.com　（既にメール送受信可）
URL：https://ramxeed.com/jp/　（2024年9月公開予定）

以上

富士通セミコンダクターメモリソリューション株式会社
　代表取締役社長　曲渕　景昌
横浜市港北区新横浜3－9－1 (新横浜Techビル7階)
代表電話：045-777-5700
お問い合わせメールアドレス：ml-SM.press@ramxeed.com

Fujitsu Launches Automotive Grade I2C-interface 512Kbit FeRAM with 125-degree C Operation

RAMXEED LIMITED — Mon, 07 Aug 2023 16:00:00 +0900

YOKOHAMA, Japan, Aug. 7, 2023 /Kyodo JBN/ --
Fujitsu Semiconductor Memory Solution Limited
Fujitsu Semiconductor Memory Solution Limited announced the launch of an I2C-interface 512Kbit FeRAM with automotive grade, MB85RC512LY. Evaluation samples are currently available.

URL: https://www.fujitsu.com/jp/group/fsm/en/products/feram/device/i2c-512k-mb85rc512ly.html

The MB85RC512LY is a non-volatile memory with 512Kbit memory density and operates at a low power supply voltage from 1.7V to 1.95V. It features extremely low operating current such as a maximum of 0.4mA at 3.4MHz operation.

This product guarantees 10 trillion read/write cycle times in the high temperature at 125 degrees C. The FeRAM product is optimal for industrial robots and automotive applications such as Advanced Driver-Assistance Systems (ADAS).

Fig.1: MB85RC512LY Packages
https://cdn.kyodonewsprwire.jp/prwfile/release/M106685/202308017682/_prw_PI1fl_Tr7BxmVm.jpg

Fig.2: Example of FeRAM Usage (Driving Data Logging)
https://cdn.kyodonewsprwire.jp/prwfile/release/M106685/202308017682/_prw_PI2fl_CS7joLiT.jpg

Since the new FeRAM has an I2C interface, customers using an I2C interface for their platform do not need major design modifications in developing an end-product by using the memory parts.

Using the above features, the new FeRAM product can solve the following issues arising from the use of memory products.

Fig.3: Customers’ Issues and Solutions
https://cdn.kyodonewsprwire.jp/prwfile/release/M106685/202308017682/_prw_PI4fl_6zfkZ9yw.jpg

The automotive-grade FeRAM family has variations of 3.3V and 1.8V operation for both I2C- and SPI-interface products. With the launch of MB85RC512LY, the AEC-Q100 compliant FeRAM family has added 7 new products since the last year. In addition, 4 new types of 1Mbit products are currently under development.

Fig.4: Automotive-grade FeRAM Lineup
https://cdn.kyodonewsprwire.jp/prwfile/release/M106685/202308017682/_prw_PI3fl_zlxBqzFt.jpg

Fujitsu believes that the required memory density needs to be varied because applications sought by customers are diverse. Fujitsu will continue to provide optimal memory products and solutions to enhance the value and convenience of customer applications.

About Fujitsu Semiconductor Memory Solution Limited
Fujitsu Semiconductor Memory Solution focuses on high-quality and highly reliable non-volatile memory like Ferroelectric Random Access Memory (FeRAM) and Resistive Random Access Memory (ReRAM). Headquartered in Yokohama, it was established as a subsidiary of Fujitsu Semiconductor Limited on March 31, 2020. Through its global sales and development network, with sites in Japan and throughout Asia, Europe and the Americas, the company offers semiconductor memory solutions to the global marketplace.

For more information, please see: https://www.fujitsu.com/jp/fsm/en/

125℃動作, I2Cインターフェースの512KビットFeRAMを開発

RAMXEED — Mon, 07 Aug 2023 11:40:36 +0900

2023年8月7日
富士通セミコンダクターメモリソリューション株式会社
　富士通セミコンダクターメモリソリューション株式会社は、125℃での動作を保証するI2CインターフェースのFeRAM製品としては最大メモリ容量となる512KビットFeRAM「MB85RC512LY」を開発し、評価サンプルの提供を開始しました。（図1）
　本製品は125℃の高温環境下においても、低動作電流および10兆回のデータ書換え回数を保証する不揮発性メモリです。先進運転支援システム(ADAS)を代表とする車載向けや産業用ロボット向けに適しています。（図2）プラットフォームにI2Cインターフェースを採用しているお客様は、本メモリ製品を使用することで大きな設計改修をせずに最終製品の開発ができます。

図1_MB85RC512LYのパッケージ図2_用途例(EVの走行データ記録)

------------------------------------------------------------------------------------------------------------

　当社は2017年から125℃まで動作保証するFeRAMとして、64Kビット～4Mビットの製品を提供してきました。ただし、これまで提供してきた製品はすべてSPIインターフェースだったため、すでにI2Cインターフェースのプラットフォームにてメモリを使用しているお客様にとっては、最終製品のインターフェースを再設計しなければいけないという課題がありました。
　このような背景を受けて、当社はI2Cインターフェースをもつ高温動作のFeRAMの開発を進め、今回1.8Vの低電源電圧で動作する512KビットFeRAM「MB85RC512LY」を開発しました。

　本製品は、1.7V～1.95Vの低電源電圧で動作する512Kビットの不揮発性メモリです。最大3.4MHzで動作したときの動作電流は最大0.4mAのため、動作電力は非常に小さいです。また、-40℃～+125℃の温度範囲においても10兆回のデータ書換え回数を保証しています。この特性は、リアルタイムなデータ記録を必要とする用途に適しており、たとえば0.03ミリ秒毎にデータを書き換えたとしても10年間同じアドレスにデータを記録し続けることが可能です。

　もし、メモリをご使用中のお客様が、以下のような課題をお持ちの場合には、今回の新製品によって解決できる場合があります。（図3）

図3_お客様の課題の解決案

ケース１）　これまでI2Cインターフェースのシステムを設計していたお客様
　課　題：　高温条件にてFeRAMを使いたいが、125℃動作でI2CインターフェースのFeRAMが無い
　解決案：　I2C品の登場により、インターフェースの大幅変更なしで新規設計が可能

ケース２）　高温動作の512Kビット品がないため、大容量品の購入を検討していたお客様
　課　題：　適切なメモリ容量の製品が無いため、大容量品のメモリを購入するしかない
　解決案：　必要なメモリ容量の512KビットFeRAMを購入することで、不必要な部品コストを削減

ケース３）　高温動作のEEPROMをご使用のお客様
　課　題：　データの書換え回数が100万回のため、設計に制限がある
　解決案：　書換え回数が10兆回のFeRAMにより、設計工数を低減

　車載グレードのFeRAM製品はI2CおよびSPIインターフェースの製品がそれぞれ3.3V動作と1.8V動作のバリエーションがあります。MB85RC512LYのリリースにより、AEC-Q100準拠のFeRAM製品ファミリーは、１年前のラインナップと比べると新規に7品種も増えています。そして、現在1Mビットの新製品4品種も開発中です。（図4）

図4_車載向けFeRAMのラインナップ

　富士通セミコンダクターメモリソリューションでは、お客様のアプリケーションは多岐に渡るため必要なメモリ容量にもバリエーションが必要と考えています。当社は、今後もお客様のアプリケーションの価値と利便性を向上させるために最適なメモリ製品とソリューションを提供します。

主な仕様
・製品名：　MB85RC512LY
・容量（メモリ構成）：　512Kビット（64K x 8ビット）
・インターフェース：　I2C （Inter-Integrated Circuit）
・動作周波数：　3.4MHz（最大）
・動作電源電圧：　1.7V～1.95V
・動作温度範囲：　-40℃～＋125℃　　　　
・書込み/読出し保証回数：　10兆回
・パッケージ：　8ピンDFN、8ピンSOP
・低消費電力：　動作電流（最大）　0.4mA
　　　　　　　　スタンバイ電流（最大）　150µA

関連リンク
・富士通セミコンダクターメモリソリューション・トップページ
・FeRAM紹介トップページ
・512KビットFeRAM「MB85RC512LY」製品紹介ページ

お問い合わせ先
富士通セミコンダクターメモリソリューション株式会社
営業・マーケティング統括部　マーケティング部
お問い合わせ: https://www.fujitsu.com/jp/group/fsm/contact/index.html

Fujitsu Launches 12Mbit ReRAM -- Largest Memory Density in ReRAM Family

RAMXEED LIMITED — Tue, 15 Mar 2022 16:00:00 +0900

YOKOHAMA, Japan, Mar. 15, 2022 /Kyodo JBN/ --
Fujitsu Semiconductor Memory Solution Limited
Fujitsu Semiconductor Memory Solution Limited announced on March 15 the launch of a 12Mbit ReRAM (Resistive Random Access Memory), MB85AS12MT. Evaluation samples are currently available.

URL: https://www.fujitsu.com/jp/group/fsm/en/products/reram/spi-12m-mb85as12mt.html

This new product is a non-volatile memory having a large memory density of 12Mbit in a very small package size of approximately 2mm x 3mm. It has an outstandingly low level of read current of 0.15mA on average during read operations. Therefore, battery consumption can be minimized by mounting the MB85AS12MT in battery-operated devices with frequent data-read operations.

With features of small package size and small read current, this product is ideal for use in wearable devices such as hearing aids and smart watches.

Fig.1: MB85AS12MT Packages (Top and Bottom)
https://kyodonewsprwire.jp/prwfile/release/M106685/202203148559/_prw_PI1fl_q04dZo1R.jpg

Fig.2: Examples of ReRAM Usage
https://kyodonewsprwire.jp/prwfile/release/M106685/202203148559/_prw_PI4fl_04Y8S95e.jpg

The MB85AS12MT operates at a wide range of power supply voltage from 1.6V to 3.6V. The new ReRAM product’s memory density is 1.5 times larger than the existing 8Mbit ReRAM while keeping the same package size, WL-CSP (Wafer Level Chip Size Package), with the same pin assignment. The product can store character data for approximately 90 pages of newspaper in a small package size.

The WL-CSP used for the MB85AS12MT can save approximately 80% of its mounted surface area compared with 8-pin SOP that is frequently used for memory devices with the Serial Peripheral Interface (SPI).

Fig.3: Mounting Area Comparison
https://kyodonewsprwire.jp/prwfile/release/M106685/202203148559/_prw_PI3fl_35lI5L7E.jpg

Using the above features, the ReRAM product can solve the following issues arising from the use of flash memory or EEPROM in the development of wearable devices.

Fig.4: Customers’ Issues and Solutions:
https://kyodonewsprwire.jp/prwfile/release/M106685/202203148559/_prw_PI2fl_Vt1u8m8L.jpg

Fujitsu Semiconductor Memory Solution continues to develop various low-power memory products to meet customers’ requirements.

About Fujitsu Semiconductor Memory Solution Limited
Fujitsu Semiconductor Memory Solution focuses on high-quality and highly reliable non-volatile memory like Ferroelectric Random Access Memory (FRAM) and Resistive Random Access Memory (ReRAM). Headquartered in Yokohama, it was established as a subsidiary of Fujitsu Semiconductor Limited on March 31, 2020. Through its global sales and development network, with sites in Japan and throughout Asia, Europe and the Americas, the company offers semiconductor memory solutions to the global marketplace. For more information, please see: https://www.fujitsu.com/jp/fsm/en/

Fujitsu Launches 8Mbit Quad SPI FRAM Capable of 54MB/s Data Writing

RAMXEED LIMITED — Tue, 18 Jan 2022 16:00:00 +0900

YOKOHAMA, Japan, Jan. 18, 2022 /Kyodo JBN/ -
Fujitsu Semiconductor Memory Solution Limited
Fujitsu Semiconductor Memory Solution Limited announced the launch of 8Mbit FRAM MB85RQ8MLX with Quad SPI interface, which is the largest density in Fujitsu’s SPI interface FRAM product family. Evaluation samples are currently available.

URL: https://www.fujitsu.com/jp/group/fsm/en/products/fram/device/qspi-8m-mb85rq8mlx.html

The MB85RQ8MLX is a non-volatile memory with 8Mbit memory density and operates at a low power supply voltage from 1.7V to 1.95V. This new Quad SPI interface FRAM achieves 54MB/s data reading/writing speed with four I/O pins and 108MHz operating frequency in high-temperature environments up to 105 degrees C. Featuring high-speed operation and non-volatility, the product is ideal for high-performance computing (HPC), data centers and industrial computing such as programmable logic controllers (PLCs), human machine interface (HMI) and RAID controllers.

Fig.1: MB85RQ8MLX Package
https://kyodonewsprwire.jp/prwfile/release/M106685/202201125945/_prw_PI5fl_GPwXw4Jw.jpg

Fig.2: Example of FRAM Usage
https://kyodonewsprwire.jp/prwfile/release/M106685/202201125945/_prw_PI6fl_YBjoLm19.jpg

FRAM is a non-volatile memory product with superior features of fast writing speed, high read/write endurance and low power consumption compared with conventional non-volatile memory such as flash memory and EEPROM. The company's FRAM products can solve issues arising from the use of flash memory, EEPROM, or low-power SRAM.

Fig.3: Customers’ Issues and Solutions
https://kyodonewsprwire.jp/prwfile/release/M106685/202201125945/_prw_PI7fl_M468umA4.jpg

With the introduction of MB85RQ8MLX, Fujitsu Semiconductor Memory Solution now has three types of 8Mbit memory products. Different features are required by customers’ end-products and, having three types of 8Mbit products, the company is proud of now being able to serve a wide variety of customer needs.

Fig.4: 8Mbit Memory Product Family
https://kyodonewsprwire.jp/prwfile/release/M106685/202201125945/_prw_PI8fl_xDRPM6L1.jpg

Fujitsu Semiconductor Memory Solution continues to develop memory products to enhance functions of customers’ end-products.

About Fujitsu Semiconductor Memory Solution Limited
Fujitsu Semiconductor Memory Solution focuses on high-quality and highly reliable non-volatile memory like Ferroelectric Random Access Memory (FRAM) and Resistive Random Access Memory (ReRAM). Headquartered in Yokohama, it was established as a subsidiary of Fujitsu Semiconductor Limited on March 31, 2020. Through its global sales and development network, with sites in Japan and throughout Asia, Europe, and the Americas, the company offers semiconductor memory solutions to the global marketplace. For more information, please see: https://www.fujitsu.com/jp/fsm/en/

Fujitsu Launches New 8Mbit FRAM Guaranteeing Writing Endurance up to 100 Trillion Times

RAMXEED LIMITED — Wed, 17 Nov 2021 16:00:00 +0900

YOKOHAMA, Japan, Nov. 17, 2021 /Kyodo JBN/ --
Fujitsu Semiconductor Memory Solution Limited
Fujitsu Semiconductor Memory Solution Limited has launched new 8Mbit FRAM MB85R8M2TA with parallel interface, which is the first product to guarantee 100 trillion read/write cycle times in Fujitsu’s FRAM product family. Evaluation samples are currently available.

URL: https://www.fujitsu.com/jp/group/fsm/en/products/fram/device/parallel-8m-mb85r8m2ta.html

Fig.1 - MB85R8M2TA Packages:
https://kyodonewsprwire.jp/prwfile/release/M106685/202111113210/_prw_PI4fl_1D8dFJht.jpg

FRAM is a non-volatile memory product with superior features of high read/write endurance, fast writing speed operation and low power consumption, and it has been mass-produced for over 20 years.

URL: https://www.fujitsu.com/jp/group/fsm/en/products/fram/features/

The MB85R8M2TA with an SRAM-compatible parallel interface operates at a wide range of power supply voltage from 1.8V to 3.6V. Being capable of operating up to 25ns in fast page mode, the new FRAM’s access speed is as high as SRAM at continuous data transfer. It achieves both high-speed operations, approximately 30% faster access speed, and low power consumption, 10% less operating current, compared to Fujitsu’s conventional products. This memory IC is an ideal replacement of SRAM in the industrial machines that require high-speed operation.

Fig.2 - Example of FRAM usage:
https://kyodonewsprwire.jp/prwfile/release/M106685/202111113210/_prw_PI3fl_sEuZ53MK.jpg

Fig.3 - Current Comparison:
https://kyodonewsprwire.jp/prwfile/release/M106685/202111113210/_prw_PI2fl_eSN8P9bQ.jpg

From the above features, the new 8Mbit FRAM brings customers the benefit of eliminating a data-backup battery necessary for SRAM in some cases.

Fig.4 - Issues and solutions when replacing SRAM with non-volatile memory:
https://kyodonewsprwire.jp/prwfile/release/M106685/202111113210/_prw_PI1fl_SfW38Sm1.jpg

Fujitsu Semiconductor Memory Solution is committed to contribution to sustainable society while developing high-performance products. As an example, the company continues working on the development of low-power consumption FRAM products. With the reduction of power consumption, it aims to reduce CO2 emissions for less greenhouse gas.

Fujitsu will continue to satisfy the needs and requirements from the market and customers and also develop eco-friendly memory products.

About Fujitsu Semiconductor Memory Solution Limited
Fujitsu Semiconductor Memory Solution focuses on high-quality and highly reliable non-volatile memory like Ferroelectric Random-Access Memory (FRAM) and Resistive Random-Access Memory (ReRAM). Headquartered in Yokohama, it was established as a subsidiary of Fujitsu Semiconductor Limited on March 31, 2020. Through its global sales and development network, with sites in Japan and throughout Asia, Europe, and the Americas, the company offers semiconductor memory solutions to the global marketplace. For more information, please see: https://www.fujitsu.com/jp/fsm/en/

Fujitsu Starts Mass-production of 4Mbit FRAM with 125 degrees C Operation Conforming to...

RAMXEED LIMITED — Tue, 06 Jul 2021 16:00:00 +0900

YOKOHAMA, Japan, July 6, 2021 /Kyodo JBN/ --
Fujitsu Semiconductor Memory Solution Limited

Fujitsu Starts Mass-production of 4Mbit FRAM with 125 degrees C Operation Conforming to Automotive Grade

Fujitsu Semiconductor Memory Solution Limited announced on July 6, the start of mass-production of 4Mbit FRAM MB85RS4MTY, which guarantees operation up to 125 degrees C.

URL: https://www.fujitsu.com/jp/group/fsm/en/products/fram/device/spi-125c-4m-mb85rs4mty.html

Fig.1: https://kyodonewsprwire.jp/prwfile/release/M106685/202106246746/_prw_PI1fl_h51FrvTZ.jpg

FRAM is a non-volatile memory product with superior features of high read/write endurance, fast writing speed and low power consumption, and it has been mass-produced for over 20 years.

URL: https://www.fujitsu.com/jp/group/fsm/en/products/fram/features/

Since mass-production of FRAM products capable to operate up to 125 degrees C started in July 2017, its product lineup has been expanding. This time the 4Mbit FRAM MB85RS4MTY, which has the largest density in the 125 degrees C -operating FRAM product family, is added to mass-production this month.

Fig.2: https://kyodonewsprwire.jp/prwfile/release/M106685/202106246746/_prw_PI2fl_t1X1L7Vu.jpg

The MB85RS4MTY meets high-reliability testing to satisfy AEC-Q100 Grade 1, a qualification requirement for products as "automotive grade," therefore suitable for high-performance industrial robots and automotive applications such as advanced driver-assistance systems (ADAS’s) that require high reliability in high-temperature environments.

Fig.3: https://kyodonewsprwire.jp/prwfile/release/M106685/202106246746/_prw_PI3fl_47S76y5J.jpg

This FRAM with an SPI interface operates at a wide power supply voltage from 1.8V to 3.6V. In the temperature range from -40 to +125 degrees C, it guarantees 10 trillion read/write cycle times and low operating current such as a maximum write current of 4mA (operated at 50MHz). It is housed in an 8-pin DFN (Dual Flatpack No-leaded) package.

The FRAM products can solve issues arising from using EEPROM or SRAM for high-reliability applications and bring to customers benefits like reduced development burden, enhanced customer product performance, and lower costs.

Fig.4: https://kyodonewsprwire.jp/prwfile/release/M106685/202106246746/_prw_PI4fl_m3l65auC.jpg

Fujitsu Semiconductor Memory Solution Limited continues to develop memory products to satisfy the needs and requirements from the market and customers.

About Fujitsu Semiconductor Memory Solution Limited
Fujitsu Semiconductor Memory Solution focuses on high-quality and highly reliable non-volatile memories like Ferroelectric Random-Access Memory (FRAM) and Resistive Random-Access Memory (ReRAM). Headquartered in Yokohama, it was established as a subsidiary of Fujitsu Semiconductor Limited on March 31, 2020. Through its global sales and development network, with sites in Japan and throughout Asia, Europe, and the Americas, the company offers semiconductor memory solutions to the global marketplace. For more information, please see: https://www.fujitsu.com/jp/fsm/en/