WPI-MANA Team Demonstrates New Laser-assisted Non-volatile Memory Based on 2D van-der-Waals ...

WPI-MANA

2021/3/17 15:00

TSUKUBA, Japan, Mar. 17, 2021 /Kyodo JBN/ --

International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS)

WPI-MANA Team Demonstrates New Laser-assisted Non-volatile Memory Based on 2D van-der-Waals Heterostructures

 

 

A research team at WPI-MANA has demonstrated a laser-assisted non-volatile memory device based on two-dimensional van-der-Waals heterostructures.

 

(Image: https://kyodonewsprwire.jp/prwfile/release/M105739/202103102063/_prw_PI1fl_sdz7zZcv.jpg )

 

The researchers designed and investigated a few-layer rhenium disulfide (ReS2) field-effect transistor with a local floating gate (FG) of monolayer graphene separated by a thin hexagonal boron nitride (h-BN) tunnel layer, and applied it to non-volatile memory (NVM) devices.

 

FG-NVM devices based on 2D van-der-Waals heterostructures (atomically thin layers that are attached to each other via very weak van-der-Waals interactions) have been the focus of considerable attention recently, as their tuneable and multibit operation under laser light could make them important components in future digital electronics and multifunctional memory applications.

 

The team demonstrated multi-level memory operation via 532nm laser pulse and electrostatic gate pulse coupling. The robustness and stability of the laser-assisted tuneable ReS2/h-BN/FG-graphene device show the potential for multibit information storage.

 

Laser-assisted memory operation provides a new degree of freedom for multifunctional optoelectronic devices with the extra functionality of optically communicated multilevel access. Since laser light can travel through free space without losing power, it allows operation of optoelectronic devices from a distance at low power and with little need for maintenance.

 

The WPI-MANA researchers used direct bandgap multilayer ReS2 because the material satisfies various requirements as a channel material for electronic devices, as well as being a strong light-absorbing layer, which makes it useful in light-assisted optoelectronic applications.

 

The device exhibits the functionality of a conventional electronic memory and can store laser pulse-excited signal information for future all-optical logic and quantum information processing.

 

It also addresses the need for a low-power and optical control of multi-level operation of NVM devices, as well as for an NVM optoelectronic device that can distinguish light wavelengths for color sensing in digital imaging.

 

This research was carried out by Yutaka Wakayama (Group Leader, Quantum Device Engineering Group, WPI-MANA, NIMS) and his collaborators.

 

“Laser-Assisted Multilevel Non-Volatile Memory Device Based on 2D van-der-Waals Few-Layer-ReS2/h-BN/Graphene Heterostructures”

Bablu Mukherjee et al., Advanced Functional Materials (August 25, 2020)

https://doi.org/10.1002/adfm.202001688

 

MANA E-BULLETIN

https://www.nims.go.jp/mana/ebulletin/

本プレスリリースは発表元が入力した原稿をそのまま掲載しております。また、プレスリリースへのお問い合わせは発表元に直接お願いいたします。

プレスリリース添付画像

| Small | Normal |
| Big | Original |

このプレスリリースには、報道機関向けの情報があります。

プレス会員登録を行うと、広報担当者の連絡先や、イベント・記者会見の情報など、報道機関だけに公開する情報が閲覧できるようになります。

プレスリリース受信に関するご案内

このプレスリリースを配信した企業・団体

  • 名称 国立研究開発法人物質・材料研究機構(NIMS) 国際ナノアーキテクト二クス研究拠点(WPI-MANA)
  • 所在地 茨城県
  • 業種 各種団体
  • URL https://www.nims.go.jp/mana/jp/
  • ※購読している企業の確認や削除はWebプッシュ通知設定画面で行なってください
  • SNSでも最新のプレスリリース情報をいち早く配信中